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Si7726DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, b
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
24
1.9
33
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS
V GS = 0 V, I D = 1 mA
30
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
V GS(th)
I GSS
I DSS
I D(on)
R DS(on)
g fs
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 100 °C
V DS ≥ 5 V, V GS = 10 V
V GS = 10 V, I D = 10 A
V GS = 4.5 V, I D = 7 A
V DS = 10 V, I D = 10 A
1.4
30
0.016
1.6
0.0077
0.010
40
2.6
± 100
0.15
15
0.0095
0.0125
V
nA
mA
A
Ω
S
Dynamic b
Input Capacitance
C iss
1765
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, f = 1 MHz
300
100
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 15 V, V GS = 10 V, I D = 10 A
V DS = 15 V, V GS = 4.5 V, I D = 10 A
28.5
12.5
4.8
43
19
nC
Gate-Drain Charge
Q gd
3.2
Gate Resistance
R g
f = 1 MHz
0.25
1.25
2.5
Ω
Turn-On Delay Time
t d(on)
23
40
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 1 Ω
10
27
20
50
Fall Time
Turn-On Delay Time
t f
t d(on)
14
10
18
20
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
8
22
8
16
40
16
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Document Number: 68600
S-81737-Rev. B, 04-Aug-08
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